非易失性存储器件用Pt/SrBi2Ta2O9/CeO2/Si结构的C-V特性

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194539

H. Lee, D. Shin, Y.T. Kim, S. Choh

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引用次数: 0

摘要

研究了Pt/SrBi2Ta2O9/CeO2/Si结构作为非易失性存储器铁电栅的电学性能。在施加电压为6V时，铁电栅的记忆窗在1~2V范围内，对应SrBi2Ta2O9薄膜的厚度。SrBi2Ta2O9的记忆窗口不依赖于剩余极化，而依赖于施加在SrBi2Ta2O9上的顽压场强。

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C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices

Electrical properties of Pt/SrBi2Ta2O9/CeO2/Si structure have been investigated for the ferroelectric gate of non-volatile memory. Memory windows of the ferroelectric gate are in the range of 1~2V corresponding to the thickness of SrBi2Ta2O9 films at the applied voltage of 6V. This memory window is strongly dependent upon not the remanent polarization but the coercive field intensity applied to the SrBi2Ta2O9.

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27th European Solid-State Device Research Conference

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