一种用于DMOS晶体管通道长度提取的电容电压测量方法

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766231

J. Olsson, R. Valtonen, U. Heinle, L. Vestling, A. Soderbarg, H. Norde

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引用次数: 16

摘要

本文报道了一种提取DMOS晶体管亚微米沟道长度的新测量方法。该方法基于栅极到源极、栅极到p基极和栅极到漏极电容的电容电压测量。在DMOS晶体管上测量到的通道长度为0.3 /spl mu/m。数值器件仿真和小信号电容仿真支持了结果和测量原理。

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A capacitance-voltage measurement method for DMOS transistor channel length extraction

This paper reports a new measurement method for extraction of sub-micrometer channel lengths in DMOS transistors. The method is based on capacitance-voltage measurements of the gate to source, gate to p-base and gate to drain capacitances. A channel length of 0.3 /spl mu/m has been measured on DMOS transistors. Numerical device simulations and small-signal capacitance simulations support the results and the measurement principle.

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来源期刊

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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