光伏应用硅纳米线的制备与表征

B. Dieng, M. Beye, A. S. Maiga, M. Toure, D. Kobor
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引用次数: 0

摘要

本文研究了金属辅助化学蚀刻(MACE)法制备硅纳米线及其表征。在这里,银(Ag)金属被用作催化剂。对于不同的银金属沉积时间,可以得到不同高度的SiNWs。分析了SiNWs的光学和电学性质,并与本体硅进行了比较。结果发现,经过5分钟处理获得的sinw比其他sinw表现更好。它们具有最低的反射率(约5%)和最佳的导电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and characterization of silicon nanowires for photovoltaic applications
This study pertains to the fabrication of silicon nanowires (SiNWs) by the Metal Assisted Chemical Etching (MACE) method and their characterization. Here, silver (Ag)-metal is used as catalyst. For different deposition times of the Ag-metal, SiNWs with different heights are obtained. The optical and electrical properties of the SiNWs are analyzed and compared with those of the bulk silicon. It was found that SiNWs, obtained for 5 minutes processing, perform better than the others. They exhibit the lowest reflectance (around 5%) and the best electric conductivity.
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