砷化镓微柱极化激子激光器的模式选择

M. Maragkou, A. Grundy, E. Wertz, J. Bloch, P. Lagoudakis
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引用次数: 0

摘要

半导体微柱为研究零维空腔中的极化提供了一种有趣的方法[1,2]。在这样的空腔中,光子在垂直方向上受到布拉格反射镜的限制,而在横向方向上则受到空气和半导体之间的折射率对比的限制。零维极化模就是这种三维约束的结果[3,4]。在GaAs微柱中首次观察到的极化激子激光显示单模工作,从系统中最低的能量模式发出激光[5]。我们证明,通过对系统的精心设计,竞争的弛豫机制可以用于从更高的能量模式实现激光。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mode selection in GaAs micropillar polariton lasers
Semiconductor micropillars offer an interesting way of studying polaritons in zero-dimensional cavities [1,2]. In such cavities, photons are confined vertically, by the Bragg mirrors, and laterally by the index of refraction contrast between the air and the semiconductor. Zero dimensional polariton modes are the result of this three-dimensional confinement [3,4]. The first observation of polariton lasing in a GaAs micropillar showed single mode operation, with lasing from the lowest energy mode in the system [5]. We demonstrate that by careful engineering of the system, competing relaxation mechanisms can be used to achieve lasing from higher energy modes.
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