具有薄倍增层的InGaAs/InP雪崩光电二极管

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088483

D. Haško, F. Uherek, F. Mika

{"title":"具有薄倍增层的InGaAs/InP雪崩光电二极管","authors":"D. Haško, F. Uherek, F. Mika","doi":"10.1109/ASDAM.2002.1088483","DOIUrl":null,"url":null,"abstract":"We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 /spl mu/A near the breakdown voltage (V/sub B/ /spl ap/ 48 V). External quantum efficiency >75% (at /spl lambda/ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"21 5 Suppl 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InGaAs/InP avalanche photodiodes with a thin multiplication layer\",\"authors\":\"D. Haško, F. Uherek, F. Mika\",\"doi\":\"10.1109/ASDAM.2002.1088483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 /spl mu/A near the breakdown voltage (V/sub B/ /spl ap/ 48 V). External quantum efficiency >75% (at /spl lambda/ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"21 5 Suppl 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文报道了一种金属有机化学气相沉积(MOCVD)制备的低噪声、低电压InGaAs/InP雪崩光电二极管(APD)的设计与表征。所研究的用于光波传输系统的InGaAs/InP APD结构由独立吸收InGaAs、电荷InP和InP倍增层(SACM)组成。所设计的无保护环APD在击穿电压(V/sub / B/ /spl / ap/ 48 V)附近的暗电流小于5 /spl mu/ a，外量子效率>75% (at /spl λ / = 1300 nm)，雪崩增益高达5，工作电压下电容低于1.1 pF。给出了测量温度对电流-电压特性、电容-电压特性和光谱特性的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

InGaAs/InP avalanche photodiodes with a thin multiplication layer

We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 /spl mu/A near the breakdown voltage (V/sub B/ /spl ap/ 48 V). External quantum efficiency >75% (at /spl lambda/ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

自引率

0.00%

发文量