MOS compact I-V modeling with variable accuracy based on genetic algorithm and simulated annealing

In this paper, a new approach to model the I-V characteristic of MOSFETs, which considers the required accuracy of the goal model, is presented. The approach utilizes a combination of genetic algorithm and simulated annealing to determine the simplest model with a specific accuracy. While the genetic algorithm determines which terms should be used in the model, the simulated annealing determines the coefficient values related to each term in the I-V characteristic of MOSFFT model. For a desired accuracy considered here, the accuracy of the results predicted by our model are within 3.1%, for PMOS, and 1.3%, for NMOS, of the results of BSIM3v3 model with much less complexity.