用于先进PDP数据驱动IC的大块硅CDMOS技术

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734507

Qian Qinsong, Wu Hong, Li Haisong, Sun Weifeng

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引用次数: 0

摘要

本文研制了用于先进PDP数据驱动集成电路的基于体硅(BS)工艺的第二代LEDMOS器件。与第一LEDMOS相比，第二LEDMOS晶体管不仅具有导通特性，而且在热载流子效应、柯克效应等可靠性问题上也得到了改善。该器件可以通过缩小电池尺寸和部分改变器件结构来实现。通过将第二LEDMOS应用于新的PDP驱动IC，我们成功地将IC的芯片尺寸缩小到与第一个IC相比的70%左右，但其输出级数增加了1.33倍，新IC的功耗也降低了15%以上。

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Bulk silicon CDMOS technology for an advanced PDP data drvier IC

In this paper, the 2nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed. Not only the on-state characteristics, but also the reliabilities of 2nd LEDMOS transistors such as hot carrier effect, Kirk effect issues are improved against the 1st LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices. And by applying the 2nd LEDMOS to the new PDP Driver IC, we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1st one, but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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