{"title":"100KV JBX-6300LS电子束纳米光刻系统曝光过程研究","authors":"Qunqing Li, Lihui Zhang, Mo Chen, S. Fan","doi":"10.1109/INEC.2008.4585685","DOIUrl":null,"url":null,"abstract":"We report on a series results of the performance of a Jeol model JBX-6300LS electron-beam nanolithography system operating at 100 KV. The exposure conditions are optimized to fabricate dense lines with 1:1 L/S and with the line-widths down to 30 nm for resist ZEP520A and PMMA. The lines show a very good uniformity within an area as large as 2 mmtimes2 mm. We obtained isolated metal lines with 22 nm widths through lift-off process based on 170 nm thick PMMA. Exposure studies were also performed for double layer resists to get a good under-cut cross section profile.","PeriodicalId":245696,"journal":{"name":"2008 2nd IEEE International Nanoelectronics Conference","volume":"107 1-2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The exposure process study of 100KV JBX-6300LS electron-beam nanolithograph system\",\"authors\":\"Qunqing Li, Lihui Zhang, Mo Chen, S. Fan\",\"doi\":\"10.1109/INEC.2008.4585685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a series results of the performance of a Jeol model JBX-6300LS electron-beam nanolithography system operating at 100 KV. The exposure conditions are optimized to fabricate dense lines with 1:1 L/S and with the line-widths down to 30 nm for resist ZEP520A and PMMA. The lines show a very good uniformity within an area as large as 2 mmtimes2 mm. We obtained isolated metal lines with 22 nm widths through lift-off process based on 170 nm thick PMMA. Exposure studies were also performed for double layer resists to get a good under-cut cross section profile.\",\"PeriodicalId\":245696,\"journal\":{\"name\":\"2008 2nd IEEE International Nanoelectronics Conference\",\"volume\":\"107 1-2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 2nd IEEE International Nanoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2008.4585685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 2nd IEEE International Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2008.4585685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The exposure process study of 100KV JBX-6300LS electron-beam nanolithograph system
We report on a series results of the performance of a Jeol model JBX-6300LS electron-beam nanolithography system operating at 100 KV. The exposure conditions are optimized to fabricate dense lines with 1:1 L/S and with the line-widths down to 30 nm for resist ZEP520A and PMMA. The lines show a very good uniformity within an area as large as 2 mmtimes2 mm. We obtained isolated metal lines with 22 nm widths through lift-off process based on 170 nm thick PMMA. Exposure studies were also performed for double layer resists to get a good under-cut cross section profile.
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