在硅衬底上直接键合InP薄膜的埋置异质结构激光二极管

2020 Opto-Electronics and Communications Conference (OECC) Pub Date : 2020-10-04 DOI:10.1109/OECC48412.2020.9273694

Koki Tsushima, Xu Han, T. Ishizaki, Takuto Shirai, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura

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摘要

成功地在硅衬底上发射了埋藏异质结构GaInAsP SCH MQW激光二极管。采用直接键合InP/Si衬底，通过湿法刻蚀和几步法再生MOVPE获得了BH激光结构。

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Buried heterostructure laser diodes using directly bonded InP thin film on silicon substrate

Successful lasing of buried heterostructure GaInAsP SCH MQW laser diode on silicon substrate has been achieved. BH laser structure was obtained by wet etching and a few steps MOVPE regrowth using directly bonded InP/Si substrate.

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2020 Opto-Electronics and Communications Conference (OECC)

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