{"title":"60ghz频段20dBm功率放大器，峰值PAE为20%","authors":"Yi Zhao, J. Long, M. Spirito","doi":"10.1109/RFIC.2011.5940687","DOIUrl":null,"url":null,"abstract":"A three-stage, 60GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-BiCMOS. Common-base differential pair stages extend BVCEO, while neutralization increases isolation, promoting stability. Self-shielded transformers, a parasitic-compensated 4∶1 output combiner and 2∶4 input splitter are designed for low insertion loss and compact dimensions on-chip. Measured small-signal gain is >20dB with over 10GHz −3dB bandwidth. Reverse isolation is better than 51dB across 50–65GHz. Maximum output power and peak-PAE are 20.5dBm and 20%, respectively, at 61.5GHz. The PA consumes 353mW from a 1.8V supply and 0.25mm2 active area.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"A 60GHz-band 20dBm power amplifier with 20% peak PAE\",\"authors\":\"Yi Zhao, J. Long, M. Spirito\",\"doi\":\"10.1109/RFIC.2011.5940687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-stage, 60GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-BiCMOS. Common-base differential pair stages extend BVCEO, while neutralization increases isolation, promoting stability. Self-shielded transformers, a parasitic-compensated 4∶1 output combiner and 2∶4 input splitter are designed for low insertion loss and compact dimensions on-chip. Measured small-signal gain is >20dB with over 10GHz −3dB bandwidth. Reverse isolation is better than 51dB across 50–65GHz. Maximum output power and peak-PAE are 20.5dBm and 20%, respectively, at 61.5GHz. The PA consumes 353mW from a 1.8V supply and 0.25mm2 active area.\",\"PeriodicalId\":448165,\"journal\":{\"name\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2011.5940687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 60GHz-band 20dBm power amplifier with 20% peak PAE
A three-stage, 60GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-BiCMOS. Common-base differential pair stages extend BVCEO, while neutralization increases isolation, promoting stability. Self-shielded transformers, a parasitic-compensated 4∶1 output combiner and 2∶4 input splitter are designed for low insertion loss and compact dimensions on-chip. Measured small-signal gain is >20dB with over 10GHz −3dB bandwidth. Reverse isolation is better than 51dB across 50–65GHz. Maximum output power and peak-PAE are 20.5dBm and 20%, respectively, at 61.5GHz. The PA consumes 353mW from a 1.8V supply and 0.25mm2 active area.
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