硅锗表面法向不对称Fabry-Perot量子约束stark效应电吸收调制器

IEEE Photonics Society Summer Topicals 2010 Pub Date : 2010-11-01 DOI:10.1109/PHOTONICS.2010.5698987

E. Edwards, R. Audet, S. Claussen, R. Schaevitz, E. Tasyurek, S. Ren, Y. Rong, T. Kamins, J. Harris, D. Miller, O. Dosunmu, M. Unlu

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引用次数: 4

摘要

在Ge/SiGe量子阱中可能实现的强电吸收调制保证了高效、cmos兼容的集成光调制器。利用不对称法布里-珀罗设计，我们展示了第一个生长在硅上的表面法向半导体调制器结构。

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Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator

The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.

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IEEE Photonics Society Summer Topicals 2010

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