模拟不同偏压下SiGe异质结双极晶体管的高频噪声行为

2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2011) Pub Date : 2011-10-01 DOI:10.1109/IMOC.2011.6169331

A. Pacheco-Sánchez, M. Enciso-Aguilar, L. Rodriguez-Mendez, E. Ramírez-García

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引用次数: 0

摘要

本文研究了给定SiGe异质结双极晶体管(HBT)在不同频率下随偏置点变化的最小噪声系数;该研究包括计算模拟和解析表达式与先前报道的测量结果之间的比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias

In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.

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2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2011)

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