CMOS射频平衡混频器的噪声优化

J. Long, R. Weber
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摘要

本文对平衡式CMOS射频直接下变频混频器的噪声特性进行了研究和分析。为了提高混频器的性能,提出了射频、本端和输出端的最优端口匹配电路结构。在此基础上,采用0.18μm CMOS工艺,采用1.2V电源,设计了单平衡和双平衡直接下变频混频器。在2.41GHz 30dBm的RF信号和2.4GHz 10dBm的LO信号驱动下,两款混频器在噪声系数和转换增益方面都表现出良好的性能。双平衡电路正通过MOSIS技术进行制作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Noise Optimization for CMOS RF Balanced Mixers
Noise features of balanced CMOS RF direct downconversion mixer are examined and analyzed in this paper. Optimal port matching circuit architectures are proposed for RF, LO and output ports to improve the mixer's performance. Based on the analysis, both a singlebalanced and a double-balanced direct down-conversion mixers are designed using a 0.18μm CMOS process, with a 1.2V power supply. With a 2.41GHz RF signal of ¿30dBm driven by a 2.4GHz LO signal of ¿10dBm, both mixers have shown good performance in noise figure and conversion gain. The double-balanced one is in process of fabrication through MOSIS.
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