{"title":"串并联记忆电容器的数学建模","authors":"M. Fouda, M. Khatib, Ahmed G. Radwan","doi":"10.1109/ICM.2013.6734949","DOIUrl":null,"url":null,"abstract":"Recently, Memristive elements such as memristor, memcapacitor and meminductors have become very attractive components in many applications, due to its unique behavior which can not be obtained using the other conventional elements. This paper discusses the analytical analysis of two memcapacitors connected in series and in parallel taking the effect of mismatch in mobility factor and polarity of each one. The obtained formulas of instantaneous memcapacitance for each memcapacitor are derived and four special cases are analyzed in more details. The proposed special cases are validated using PSPICE simulations showing a great matching.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"On the mathematical modeling of series and parallel memcapacitors\",\"authors\":\"M. Fouda, M. Khatib, Ahmed G. Radwan\",\"doi\":\"10.1109/ICM.2013.6734949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, Memristive elements such as memristor, memcapacitor and meminductors have become very attractive components in many applications, due to its unique behavior which can not be obtained using the other conventional elements. This paper discusses the analytical analysis of two memcapacitors connected in series and in parallel taking the effect of mismatch in mobility factor and polarity of each one. The obtained formulas of instantaneous memcapacitance for each memcapacitor are derived and four special cases are analyzed in more details. The proposed special cases are validated using PSPICE simulations showing a great matching.\",\"PeriodicalId\":372346,\"journal\":{\"name\":\"2013 25th International Conference on Microelectronics (ICM)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2013.6734949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2013.6734949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the mathematical modeling of series and parallel memcapacitors
Recently, Memristive elements such as memristor, memcapacitor and meminductors have become very attractive components in many applications, due to its unique behavior which can not be obtained using the other conventional elements. This paper discusses the analytical analysis of two memcapacitors connected in series and in parallel taking the effect of mismatch in mobility factor and polarity of each one. The obtained formulas of instantaneous memcapacitance for each memcapacitor are derived and four special cases are analyzed in more details. The proposed special cases are validated using PSPICE simulations showing a great matching.
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