GaAs/AlGaAs量子阱中吸收和折射率的精确建模

G.J. Nott, E. Goldys
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引用次数: 0

摘要

利用GaAs/AlGaAs量子阱的实介电常数和虚介电常数,计算了该结构的吸收和折射率。通过求各临界点对态密度的贡献,得到虚介电常数。每个贡献的Kramers-Kronig变换给出了相应的实际介电常数,这些贡献的总和得到了材料的总实际介电常数。从虚介电常数中得到吸收,并拟合到实验光谱中。在随后的折射率计算中考虑了限制和连续跃迁的所有贡献,所得光谱与已发表的数据相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well
Using the real and imaginary dielectric constants of a GaAs/AlGaAs quantum well, both the absorption and refractive index of the structure were calculated. The imaginary dielectric constant was obtained by finding the contribution from each critical point in the density of states. The Kramers-Kronig transform of each contribution gave the corresponding real dielectric constant and these contributions were summed to give the material's total real dielectric constant. Absorption was found from the imaginary dielectric constant and fitted to experimental spectra. All contributions from confined and continuum transitions were considered in the subsequent calculation of refractive index with the resulting spectrum being comparable to published data.
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