{"title":"高性能无铝二极管激光器","authors":"L. Mawst","doi":"10.1109/LEOSST.1997.619229","DOIUrl":null,"url":null,"abstract":"Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and \"wallplug\" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance Al-free diode lasers\",\"authors\":\"L. Mawst\",\"doi\":\"10.1109/LEOSST.1997.619229\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and \\\"wallplug\\\" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619229\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619229","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and "wallplug" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.