Development of Half-bridge IC with On-chip Drivers and Power e-HEMT Based on GaN-on-SOI Platform

This paper presents the results on the development, simulation and optimization of the electrical circuit diagram, as well as the layout of a monolithic GaN half-bridge integrated circuit with on-chip drivers and power e-HEMT transistors based on the GaN-on-SOI technology platform. The presented integrated circuit is an alternative to multi-chip hybrid CMOS-GaN solutions. The power stage, logic control, and high-side and low-side drivers are integrated into one chip. The simulation results demonstrate the high potential of using GaN half-bridge integrated circuits as part of high-performance electrical energy converters.