一款多标准、三频段无线收发器，采用130纳米CMOS技术，集成PAs，适用于物联网应用

2018 IEEE Radio and Wireless Symposium (RWS) Pub Date : 1900-01-01 DOI:10.1109/RWS.2018.8304953

M. Scholl, Tobias Saalfeld, Jan Henning Mueller, Ye Zhang, V. Bonehi, Christoph Beyerstedt, Fabian Speicher, M. Schrey, R. Wunderlich, S. Heinen

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引用次数: 3

摘要

这项工作提出了一个完全集成的多标准，三波段无线收发器与集成的pa。窄带收发器适用于LoRaWAN, IEEE 802.15.4 (ZigBee)， 802.15.4g (SUN)和蓝牙，以促进未来物联网应用中的互操作性。在该架构下，一个1.5-2.0 GHz频率合成器支持未授权的2.4 GHz频段和780-960 MHz和390-510 MHz的ISM频段，从而实现了区域高效设计。低频段输出功率为20.0 dBm，漏极效率为55%，中频段输出功率为24.3 dBm，漏极效率为44%，2.4 GHz频段输出功率为15.3 dBm，漏极效率为43%，无需外部放大器即可实现高范围应用。该芯片采用130纳米CMOS技术制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A multistandard, triple band wireless transceiver in a 130 nm CMOS technology with integrated PAs for IoT applications

This work presents a fully integrated multistandard, triple band wireless transceiver with integrated PAs. The narrowband transceiver is suitable for LoRaWAN, IEEE 802.15.4 (ZigBee), 802.15.4g (SUN) and Bluetooth to promote interoperability in future internet-of-things applications. With the presented architecture the unlicensed 2.4 GHz band and the ISM bands at 780–960 MHz and 390–510 MHz are supported with a single 1.5–2.0 GHz frequency synthesizer leading to an area efficient design. The output power for the low band is 20.0 dBm at 55% drain efficiency, for the mid band 24.3 dBm at 44 % drain efficiency and for the 2.4 GHz band 15.3 dBm at 43 % drain efficiency to allow high range applications without need of external PAs. The chip has been fabricated in a 130 nm CMOS technology.

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来源期刊

2018 IEEE Radio and Wireless Symposium (RWS)

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