F. Arnaud, B. Duriez, B. Tavel, L. Pain, J. Todeschini, M. Jurdit, Y. Laplanche, F. Boeuf, F. Salvetti, D. Lenoble, J. Reynard, F. Wacquant, P. Morin, N. Emonet, D. Barge, M. Bidaud, D. Ceccarelli, P. Vannier, Y. Loquet, H. Leninger, F. Judong, C. Perrot, I. Guilmeau, R. Palla, A. Beverina, V. Dejonghe, M. Broekaart, V. Vachellerie, R. Bianchi, B. Borot, T. Devoivre, N. Bicais, D. Roy, M. Denais, K. Rochereau, R. Difrenza, N. Planes, H. Brut, L. Vishnobulta, D. Reber, P. Stolk, M. Woo
{"title":"低成本65nm CMOS平台，适用于低功耗和通用应用","authors":"F. Arnaud, B. Duriez, B. Tavel, L. Pain, J. Todeschini, M. Jurdit, Y. Laplanche, F. Boeuf, F. Salvetti, D. Lenoble, J. Reynard, F. Wacquant, P. Morin, N. Emonet, D. Barge, M. Bidaud, D. Ceccarelli, P. Vannier, Y. Loquet, H. Leninger, F. Judong, C. Perrot, I. Guilmeau, R. Palla, A. Beverina, V. Dejonghe, M. Broekaart, V. Vachellerie, R. Bianchi, B. Borot, T. Devoivre, N. Bicais, D. Roy, M. Denais, K. Rochereau, R. Difrenza, N. Planes, H. Brut, L. Vishnobulta, D. Reber, P. Stolk, M. Woo","doi":"10.1109/VLSIT.2004.1345363","DOIUrl":null,"url":null,"abstract":"A 65nm CMOS platform employing General Purpose (GP) and Low Power (LP) devices and 0.5 /spl mu/m/sup 2/ 6T-SRAM bit-cells was developed using both conventional design and low cost CMOS process flow incorporating a strained silicon solution. Fully working 0.5 /spl mu/m/sup 2/ bit-cells with 240mV of SNM and 35 /spl mu/A of cell current at 1.2V operation were obtained. The GP transistor drive currents of 875 /spl mu/A/ /spl mu/m and 400 /spl mu/A/ /spl mu/m for NMOS and PMOS respectively are obtained at V/sub dd/ = 1V, Ioff = 100nA/um. Using the same CMOS flow, 65nm analog transistor parameters are derived for the first time, showing Vt matching (Avt=2.2mV. /spl mu/m) and analog voltage gain factor (G/sub m//G/sub d/>2000 for L = 10 /spl mu/m) at the leading edge for this process technology. NBTI criteria at 125/spl deg/C for both LP and GP transistors are presented and characterized at overdrive conditions.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"Low cost 65nm CMOS platform for Low Power & General Purpose applications\",\"authors\":\"F. Arnaud, B. Duriez, B. Tavel, L. Pain, J. Todeschini, M. Jurdit, Y. Laplanche, F. Boeuf, F. Salvetti, D. Lenoble, J. Reynard, F. Wacquant, P. Morin, N. Emonet, D. Barge, M. Bidaud, D. Ceccarelli, P. Vannier, Y. Loquet, H. Leninger, F. Judong, C. Perrot, I. Guilmeau, R. Palla, A. Beverina, V. Dejonghe, M. Broekaart, V. Vachellerie, R. Bianchi, B. Borot, T. Devoivre, N. Bicais, D. Roy, M. Denais, K. Rochereau, R. Difrenza, N. Planes, H. Brut, L. Vishnobulta, D. Reber, P. Stolk, M. Woo\",\"doi\":\"10.1109/VLSIT.2004.1345363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 65nm CMOS platform employing General Purpose (GP) and Low Power (LP) devices and 0.5 /spl mu/m/sup 2/ 6T-SRAM bit-cells was developed using both conventional design and low cost CMOS process flow incorporating a strained silicon solution. Fully working 0.5 /spl mu/m/sup 2/ bit-cells with 240mV of SNM and 35 /spl mu/A of cell current at 1.2V operation were obtained. The GP transistor drive currents of 875 /spl mu/A/ /spl mu/m and 400 /spl mu/A/ /spl mu/m for NMOS and PMOS respectively are obtained at V/sub dd/ = 1V, Ioff = 100nA/um. Using the same CMOS flow, 65nm analog transistor parameters are derived for the first time, showing Vt matching (Avt=2.2mV. /spl mu/m) and analog voltage gain factor (G/sub m//G/sub d/>2000 for L = 10 /spl mu/m) at the leading edge for this process technology. NBTI criteria at 125/spl deg/C for both LP and GP transistors are presented and characterized at overdrive conditions.\",\"PeriodicalId\":297052,\"journal\":{\"name\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2004.1345363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low cost 65nm CMOS platform for Low Power & General Purpose applications
A 65nm CMOS platform employing General Purpose (GP) and Low Power (LP) devices and 0.5 /spl mu/m/sup 2/ 6T-SRAM bit-cells was developed using both conventional design and low cost CMOS process flow incorporating a strained silicon solution. Fully working 0.5 /spl mu/m/sup 2/ bit-cells with 240mV of SNM and 35 /spl mu/A of cell current at 1.2V operation were obtained. The GP transistor drive currents of 875 /spl mu/A/ /spl mu/m and 400 /spl mu/A/ /spl mu/m for NMOS and PMOS respectively are obtained at V/sub dd/ = 1V, Ioff = 100nA/um. Using the same CMOS flow, 65nm analog transistor parameters are derived for the first time, showing Vt matching (Avt=2.2mV. /spl mu/m) and analog voltage gain factor (G/sub m//G/sub d/>2000 for L = 10 /spl mu/m) at the leading edge for this process technology. NBTI criteria at 125/spl deg/C for both LP and GP transistors are presented and characterized at overdrive conditions.
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