基于双谐波态GaN, InN, AlN, TED的Gunn二极管的产生

2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals Pub Date : 2010-10-25 DOI:10.1109/UWBUSIS.2010.5609131

I. Storozhenko, Y. Arkusha

{"title":"基于双谐波态GaN, InN, AlN, TED的Gunn二极管的产生","authors":"I. Storozhenko, Y. Arkusha","doi":"10.1109/UWBUSIS.2010.5609131","DOIUrl":null,"url":null,"abstract":"The frequency and power capabilities of the nitride semiconductor-?3?5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED's for the harmonic and biharmonic modes are discussed.","PeriodicalId":124478,"journal":{"name":"2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals","volume":"183 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The generation by Gunn diodes based on the GaN, InN, AlN TED's in biharmonic regime\",\"authors\":\"I. Storozhenko, Y. Arkusha\",\"doi\":\"10.1109/UWBUSIS.2010.5609131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The frequency and power capabilities of the nitride semiconductor-?3?5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED's for the harmonic and biharmonic modes are discussed.\",\"PeriodicalId\":124478,\"journal\":{\"name\":\"2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals\",\"volume\":\"183 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UWBUSIS.2010.5609131\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UWBUSIS.2010.5609131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

氮化半导体的频率和功率性能利用谷间电子转移的温度模型对5基Gunn二极管进行了评价。讨论了氮化半导体在谐波和双谐波模式下的应用前景、存在的问题和特点。

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The generation by Gunn diodes based on the GaN, InN, AlN TED's in biharmonic regime

The frequency and power capabilities of the nitride semiconductor-?3?5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED's for the harmonic and biharmonic modes are discussed.

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2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals

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