模拟晶间位错滑移传递过程中的晶界阻力

M. Koning, R. Miller, V. Bulatov, F. F. Abraham
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引用次数: 127

摘要

摘要本文研究了由于晶界(GB)的存在对相邻晶粒间晶格位错滑动的阻力。应用分子动力学(MD)模拟和线张力(LT)模型的组合,我们确定了与该过程描述相关的几何参数。在MD模拟中,我们观察到从Ni中一系列纯倾斜GBs附近的裂纹尖端形成的位错环的滑移传递。根据在存在GB的情况下激活Frank-Read源的LT模型,对结果进行了合理化。研究发现,滑移传递阻力仅是三个变量的函数:第一,传入滑移系统上的分解应力与传出滑移系统上的分解应力之比;第二,在GB平面上留下的任何残余Burgers矢量含量的大小;第三,在GB平面上传入滑移面和传出滑移面的迹线之间的角度。与MD模拟和实验数据的比较表明,LT模型捕获了滑移传递的基本能量,并表明了GB几何形状和加载条件与滑移传递阻力之间相对简单的函数关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modelling grain-boundary resistance in intergranular dislocation slip transmission
Abstract We investigate the resistance on the glide of lattice dislocations between adjacent crystal grains due to the presence of a grain boundary (GB). Applying a combination of molecular dynamics (MD) simulations and a line tension (LT) model we identify the geometrical parameters that are relevant in the description of this process. In the MD simulations we observe slip transmission of dislocation loops nucleated from a crack tip near a series of pure tilt GBs in Ni. The results are rationalized in terms of a LT model for the activation of a Frank-Read source in the presence of a GB. It is found that the slip transmission resistance is a function of only three variables: firstly, the ratio of resolved stress on the incoming slip system to that on the outgoing slip system, secondly, the magnitude of any residual Burgers vector content left in the GB and, thirdly, the angle between the traces of the incoming and outgoing slip planes in the GB plane. Comparison with the MD simulations and experimental data shows that the LT model captures the essential energetics of slip transmission and suggests relatively simple functional relationships between the GB geometry and loading conditions on the one hand and slip transmission resistance on the other.
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