用瞬态干涉映射法分析HBTs的电流增益崩溃

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412639

S. Bychikhin, V. Dubec, J. Kuzmík, J. Wurfl, P. Kurpas, J. Teyssier, D. Pogany

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引用次数: 1

摘要

利用瞬态干涉映射法研究了多指InGaP/GaAs薄膜中电流增益崩溃时的热分布。在具有低发射极镇流器电阻的器件中，在大约1ms的时间内观察到崩溃的开始，而对于具有高电阻的HBTs，电流均匀地分布在手指上。三维热模拟支持该结果，并允许对坍塌发生的温度进行估计。

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Current gain collapse in HBTs analysed by transient interferometric mapping method

Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance RE, while for HBTs with a high RE, the current is distributed equally over the fingers. 3D thermal simulation supports the results and allows an estimation of temperature at which the collapse occurs.

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2007 European Microwave Integrated Circuit Conference

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