用于薄膜和三维集成电路表征的全场泵-探针热反射成像

S. Alajlouni, K. Maize, A. Shakouri
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引用次数: 0

摘要

我们评估了光泵浦探针成像,其中激光加热和随后的非接触式全场热反射表征用于研究薄膜材料和3D集成电路芯片。受热区域的直径可以从一微米到毫米或厘米不等。然后使用百万像素锁定相机以50ns的时间分辨率捕获表面或界面的热反射曲线形状。通过将测量的热表面轮廓与有限元建模相结合,我们证明了提取各种衬底上薄膜导热系数的能力。通过适当选择泵浦和探针波长,评估了该技术作为通用表征工具的潜力。复杂芯片在制造过程中的结构完整性和失效分析备受关注。3D芯片的散热通常是一个关键挑战。对三维芯片中埋层或接触面质量的全场热成像技术的灵敏度进行了量化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Full-field pump-probe thermoreflectance imaging for characterization of thin films and 3D integrated circuits
We evaluate optical pump-probe imaging where laser heating and subsequent non-contact full-field thermoreflectance characterization is used to study thin film materials and 3D integrated circuit chips. The diameter of the heated region can range from one micron up to millimeters or centimeters. The shape of the surface or interface thermoreflectance profile is then captured with 50 ns time-resolution using mega-pixel lock-in camera. By combining the measured thermal surface profile with finite-element modeling, we demonstrate the ability to extract the thermal conductivity of thin films on various substrates. With the proper choice of pump and probe wavelengths, the potential of the technique as a general characterization tool is evaluated. There is a lot of interest in structural integrity and failure-analysis of complex chips during manufacturing. Heat sinking in 3D chips is often a key challenge. The sensitivity of the full-field thermal imaging technique to study the quality of buried (below the surface) layers or contacts in 3D chips is quantified.
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