igbt -双极分立达灵顿功率开关:性能和设计

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting Pub Date : 1991-09-28 DOI:10.1109/IAS.1991.178056

S. Biswas, B. Basak, K. Rajashekara

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引用次数: 1

摘要

提出了一种IGBT(绝缘栅双极晶体管)-双极离散达灵顿功率开关。主大电流双极电源开关由低电流IGBT驱动，产生低驱动要求和高电流处理能力的开关。功耗低于mos双极达灵顿电路。使用离散器件模型和一个重要的寄生网络来研究这种开关的行为。讨论了开关和驱动电路的一些重要设计参数，以及提高电路性能的可能途径。文中还介绍了保护和并联的几个方面。分析和讨论的依据是实验室实验的示波图

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IGBT-bipolar discrete Darlington power switches: performance and design

An IGBT (insulated-gate bipolar transistor)-bipolar discrete Darlington power switch is presented. The main high-current bipolar power switch is driven by a lower current IGBT, yielding a switch with low drive requirements and high current handling capacity. The power dissipation is lower than that of a MOS-bipolar Darlington. The behavior of such a switch is investigated using discrete device models and an important parasitic network. Some of the important design parameters of the switch and drive circuit are discussed together with possible ways of improving circuit performance. Some aspects of protection and paralleling are also presented. The analysis and discussions are supported by oscillograms from laboratory experiments.<>

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Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting

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