利用薄膜技术设计边缘镀SIW BPF

Manu Kashyap, Abhinav Joshi, A. Basu, Sakshi Leekha
{"title":"利用薄膜技术设计边缘镀SIW BPF","authors":"Manu Kashyap, Abhinav Joshi, A. Basu, Sakshi Leekha","doi":"10.1109/imarc49196.2021.9714622","DOIUrl":null,"url":null,"abstract":"A SIW based BPF using the thin film technology is showcased and design considerations are presented. Multiple BPFs were initially designed through 3D EM simulations to derive the equations for different parameters of the filter. A $\\mathbf{5}^{\\text{th}}$ order $32\\mathrm{GHz}-42.5\\mathrm{GHz}$ SIW BPF with FBW of 28.2% was achieved using this approach. A row of continuous vias on SIW BPF were replaced by an edge plating process. Simulation results of BPF hows an attenuation below 1dB in the passband ampersand out of band rejection of 30dB. The S11 at center frequency was $-19.5\\mathrm{~dB}$. The measured result shows a good correlation with the simulation results.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Edge Plated SIW BPF Using Thin Film Technology\",\"authors\":\"Manu Kashyap, Abhinav Joshi, A. Basu, Sakshi Leekha\",\"doi\":\"10.1109/imarc49196.2021.9714622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A SIW based BPF using the thin film technology is showcased and design considerations are presented. Multiple BPFs were initially designed through 3D EM simulations to derive the equations for different parameters of the filter. A $\\\\mathbf{5}^{\\\\text{th}}$ order $32\\\\mathrm{GHz}-42.5\\\\mathrm{GHz}$ SIW BPF with FBW of 28.2% was achieved using this approach. A row of continuous vias on SIW BPF were replaced by an edge plating process. Simulation results of BPF hows an attenuation below 1dB in the passband ampersand out of band rejection of 30dB. The S11 at center frequency was $-19.5\\\\mathrm{~dB}$. The measured result shows a good correlation with the simulation results.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了一种基于SIW的基于薄膜技术的BPF,并提出了设计注意事项。通过三维电磁仿真初步设计了多个bpf,推导出不同滤波器参数下的方程。使用该方法实现了FBW为28.2%的$\mathbf{5}^{\text{th}}$ order $32\ mathm {GHz}-42.5\ mathm {GHz}$ SIW BPF。用边镀工艺取代了单晶硅双极板上的一排连续孔。BPF的仿真结果表明,在通带和带外抑制30dB的情况下,衰减小于1dB。中心频率处的S11为$-19.5\ mathm {~dB}$。实测结果与仿真结果具有良好的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of Edge Plated SIW BPF Using Thin Film Technology
A SIW based BPF using the thin film technology is showcased and design considerations are presented. Multiple BPFs were initially designed through 3D EM simulations to derive the equations for different parameters of the filter. A $\mathbf{5}^{\text{th}}$ order $32\mathrm{GHz}-42.5\mathrm{GHz}$ SIW BPF with FBW of 28.2% was achieved using this approach. A row of continuous vias on SIW BPF were replaced by an edge plating process. Simulation results of BPF hows an attenuation below 1dB in the passband ampersand out of band rejection of 30dB. The S11 at center frequency was $-19.5\mathrm{~dB}$. The measured result shows a good correlation with the simulation results.
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