基于氧控表面反应的CVD技术制备了用于gb dram中MIM电容器的共形钌电极

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852786

M. Hiratani, T. Nabatame, Y. Matsui, Y. Shimamoto, Y. Sasago, Y. Nakamura, Y. Ohji, I. Asano, S. Kimura

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引用次数: 4

摘要

我们开发了一种新的CVD-Ru技术，阐明了生长机理并制备了BST电容器。生长机理以表面反应为主，表面反应速率由供氧速率决定。良好的调节条件可以制造任何类型的存储节点:具有均匀20nm薄膜厚度的凹型和埋藏薄膜的柱型。在Ru-CVD过程中，电极/BST界面被还原氧化反应降解，但退火后恢复了理想的I-V特性。

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A conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction

We have developed a novel CVD-Ru technique, clarified the growth mechanism and fabricated BST capacitors. The growth mechanism is dominated by the surface reaction which is rate-determined by the oxygen supply. Well-tuned conditions enable fabrication of any type of storage node: a concave type with a uniform 20-nm film thickness and a pillar type from a buried film. The electrode/BST interface is degraded by the reduction-oxidation reaction during the Ru-CVD, but post-annealing restores the ideal I-V characteristics.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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