{"title":"忆阻式电流反射镜噪声分析","authors":"Nazerke Kulmukhanova, I. Dolzhikova","doi":"10.1109/coconet.2018.8476813","DOIUrl":null,"url":null,"abstract":"This work presents an analysis of noise in a cascode current mirror with CMOS-memristive device done by comparison with the basic current mirror. The analysis is completed based on THD for different frequency and channel length values by means of computer-aided design. AC and DC analyses are presented for both balanced and unbalanced current mirrors. While the change in the channel length has similar effect in both circuits, at high frequencies the memristive circuit is less susceptible to noise.","PeriodicalId":250788,"journal":{"name":"2018 International Conference on Computing and Network Communications (CoCoNet)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Noise in Current Mirrors with memristive Device\",\"authors\":\"Nazerke Kulmukhanova, I. Dolzhikova\",\"doi\":\"10.1109/coconet.2018.8476813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents an analysis of noise in a cascode current mirror with CMOS-memristive device done by comparison with the basic current mirror. The analysis is completed based on THD for different frequency and channel length values by means of computer-aided design. AC and DC analyses are presented for both balanced and unbalanced current mirrors. While the change in the channel length has similar effect in both circuits, at high frequencies the memristive circuit is less susceptible to noise.\",\"PeriodicalId\":250788,\"journal\":{\"name\":\"2018 International Conference on Computing and Network Communications (CoCoNet)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Computing and Network Communications (CoCoNet)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/coconet.2018.8476813\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Computing and Network Communications (CoCoNet)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/coconet.2018.8476813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of Noise in Current Mirrors with memristive Device
This work presents an analysis of noise in a cascode current mirror with CMOS-memristive device done by comparison with the basic current mirror. The analysis is completed based on THD for different frequency and channel length values by means of computer-aided design. AC and DC analyses are presented for both balanced and unbalanced current mirrors. While the change in the channel length has similar effect in both circuits, at high frequencies the memristive circuit is less susceptible to noise.