100KHz-20MHz可编程亚阈值G_m-C低通滤波器,0.18µm CMOS

S. Ramasamy, B. Venkataramani, R. Niranjini, K. Suganya
{"title":"100KHz-20MHz可编程亚阈值G_m-C低通滤波器,0.18µm CMOS","authors":"S. Ramasamy, B. Venkataramani, R. Niranjini, K. Suganya","doi":"10.1109/VLSI.Design.2009.19","DOIUrl":null,"url":null,"abstract":"This paper proposes a modified, inverter based transconductor using double CMOS pair for implementation of biquad Gm-C low-pass filter with bandwidth tunable from 100 kHz to 20 MHz. This bandwidth range meets the requirements  of  zero IF receivers  for wireless applications. Major contributions of this paper are proposal for operating the Gm stage in sub-threshold region so as to minimize the power dissipation,  proposal for switching in both dummy stages and load capacitors (accumulation MOS-Capacitor)  to maintain constant capacitance. The centre frequency of the filter is varied by switching in different Gm cells. The proposed filter is designed and implemented on TSMC-0.18µm CMOS process with 1.8V supply using Gm/Id design methodology. The simulation results demonstrate the tunability of the centre frequency from 100KHz to 20MHz. The power dissipated by the filter is 12µW and 900µW at 100KHz and 20MHz respectively. The  SFDR over the entire band is 57dB.  The proposed approach guarantees the upper bound on THD to be -40dB for 300mVpp signal swing. The use of inverters with double CMOS pair results in 34dB higher PSRR compared to those using push pull inverter.","PeriodicalId":267121,"journal":{"name":"2009 22nd International Conference on VLSI Design","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"100KHz-20MHz  Programmable Subthreshold G_m-C Low-Pass Filter  in 0.18µ-m CMOS\",\"authors\":\"S. Ramasamy, B. Venkataramani, R. Niranjini, K. Suganya\",\"doi\":\"10.1109/VLSI.Design.2009.19\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a modified, inverter based transconductor using double CMOS pair for implementation of biquad Gm-C low-pass filter with bandwidth tunable from 100 kHz to 20 MHz. This bandwidth range meets the requirements  of  zero IF receivers  for wireless applications. Major contributions of this paper are proposal for operating the Gm stage in sub-threshold region so as to minimize the power dissipation,  proposal for switching in both dummy stages and load capacitors (accumulation MOS-Capacitor)  to maintain constant capacitance. The centre frequency of the filter is varied by switching in different Gm cells. The proposed filter is designed and implemented on TSMC-0.18µm CMOS process with 1.8V supply using Gm/Id design methodology. The simulation results demonstrate the tunability of the centre frequency from 100KHz to 20MHz. The power dissipated by the filter is 12µW and 900µW at 100KHz and 20MHz respectively. The  SFDR over the entire band is 57dB.  The proposed approach guarantees the upper bound on THD to be -40dB for 300mVpp signal swing. The use of inverters with double CMOS pair results in 34dB higher PSRR compared to those using push pull inverter.\",\"PeriodicalId\":267121,\"journal\":{\"name\":\"2009 22nd International Conference on VLSI Design\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-01-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 22nd International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.Design.2009.19\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 22nd International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.Design.2009.19","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了一种改进的、基于逆变器的双CMOS对晶体管,用于实现带宽从100 kHz到20 MHz可调的双组Gm-C低通滤波器。该带宽范围满足无线应用中零中频接收机的要求。本文的主要贡献是提出了在亚阈值区域运行Gm级以使功耗最小化的方案,提出了在虚拟级和负载电容(累加式mos电容器)同时切换以保持电容恒定的方案。在不同的Gm细胞中切换滤波器的中心频率是不同的。采用Gm/Id设计方法,在TSMC-0.18µm CMOS工艺上设计和实现了该滤波器,电源为1.8V。仿真结果表明,中心频率在100KHz ~ 20MHz范围内具有可调性。滤波器在100KHz和20MHz时的功耗分别为12µW和900µW。整个频带的SFDR为57dB。该方法保证了300mVpp信号摆幅下的THD上限为-40dB。使用双CMOS对的逆变器比使用推挽式逆变器的PSRR高34dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
100KHz-20MHz  Programmable Subthreshold G_m-C Low-Pass Filter  in 0.18µ-m CMOS
This paper proposes a modified, inverter based transconductor using double CMOS pair for implementation of biquad Gm-C low-pass filter with bandwidth tunable from 100 kHz to 20 MHz. This bandwidth range meets the requirements  of  zero IF receivers  for wireless applications. Major contributions of this paper are proposal for operating the Gm stage in sub-threshold region so as to minimize the power dissipation,  proposal for switching in both dummy stages and load capacitors (accumulation MOS-Capacitor)  to maintain constant capacitance. The centre frequency of the filter is varied by switching in different Gm cells. The proposed filter is designed and implemented on TSMC-0.18µm CMOS process with 1.8V supply using Gm/Id design methodology. The simulation results demonstrate the tunability of the centre frequency from 100KHz to 20MHz. The power dissipated by the filter is 12µW and 900µW at 100KHz and 20MHz respectively. The  SFDR over the entire band is 57dB.  The proposed approach guarantees the upper bound on THD to be -40dB for 300mVpp signal swing. The use of inverters with double CMOS pair results in 34dB higher PSRR compared to those using push pull inverter.
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