准确评估芯片与封装之间的相互作用是设计弹性三维集成电路系统的关键因素

V. Sukharev, A. Kteyan, J. Choy
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引用次数: 3

摘要

提出了一种评估温度和芯片封装相互作用(CPI)诱导应力对2.5D/3D架构集成电路性能和可靠性影响的新方法。开发了基于物理的模型和多物理场EDA工具原型,分析了封装组装和芯片操作过程中的热和热机械问题。该工具采用有效的各向异性热机械性能方法,可以准确地表示模具或层内的非均匀性,并通过避免复杂的几何形状显着提高计算性能。在布局分析工具和多物理场热机械工具之间实现了链接,可以在设计流程中执行可靠性检查。开发的应力模拟流程考虑了从封装宏观尺度到互连段和晶体管纳米尺度的多尺度应力变化。获得的芯片间温度和应力场用于计算晶体管电特性的变化,并用于分析互连层中潜在的开裂位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Accurate Assessment of Chip-Package Interaction is a Key Factor for Designing Resilient 3D IC Systems
Novel approach for assessment of the effect of temperature and chip-package interaction (CPI) induced stress on performance and reliability of ICs with 2.5D/3D architectures is presented. A developed physics-based model and a multiphysics EDA tool-prototype analyze thermal, and thermomechanical problems during package assembly and chip operation. The tool employs effective anisotropic thermalmechanical properties methodology that accurately represents non-uniformity within a die or a layer, and significantly boosts computational performance by avoiding complex geometries. An implemented link between layout analysis tools and the multiphysics thermal mechanical tool enables to perform reliability check within the design flow. The developed stress simulation flow takes into account multiscale stress variations from a package macro-scale to an interconnect segment and transistor nano-scale. The obtained across-chip temperature and stress fields are used for calculating the variations in transistors electrical characteristics, and for analysis of potential cracking locations in the interconnect layers.
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