半导体存储器件的抗噪特性——UV-EPROM与静态RAM的比较

1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261) Pub Date : 1999-08-02 DOI:10.1109/ISEMC.1999.812885

A. Mutoh, S. Nitta

{"title":"半导体存储器件的抗噪特性——UV-EPROM与静态RAM的比较","authors":"A. Mutoh, S. Nitta","doi":"10.1109/ISEMC.1999.812885","DOIUrl":null,"url":null,"abstract":"This paper describes noise immunity characteristics of two kinds of semiconductor memory devices: ultraviolet erasable programmable ROM (UV-EPROM) and static RAM (SRAM). Noise immunity characteristics of SRAM are compared with that of UV-EPROM and it is concluded that UV-EPROM is superior to SRAM from the point of view that a the former has a self-recovery function after malfunction due to noise and is effective in realizing safe and reliable digital systems.","PeriodicalId":312828,"journal":{"name":"1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261)","volume":"386 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM\",\"authors\":\"A. Mutoh, S. Nitta\",\"doi\":\"10.1109/ISEMC.1999.812885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes noise immunity characteristics of two kinds of semiconductor memory devices: ultraviolet erasable programmable ROM (UV-EPROM) and static RAM (SRAM). Noise immunity characteristics of SRAM are compared with that of UV-EPROM and it is concluded that UV-EPROM is superior to SRAM from the point of view that a the former has a self-recovery function after malfunction due to noise and is effective in realizing safe and reliable digital systems.\",\"PeriodicalId\":312828,\"journal\":{\"name\":\"1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261)\",\"volume\":\"386 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.1999.812885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.1999.812885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了两种半导体存储器件紫外可擦可编程ROM (UV-EPROM)和静态RAM (SRAM)的抗噪特性。比较了SRAM与UV-EPROM的抗噪声特性，认为UV-EPROM在噪声故障后具有自恢复功能，能够有效实现安全可靠的数字系统，优于SRAM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM

This paper describes noise immunity characteristics of two kinds of semiconductor memory devices: ultraviolet erasable programmable ROM (UV-EPROM) and static RAM (SRAM). Noise immunity characteristics of SRAM are compared with that of UV-EPROM and it is concluded that UV-EPROM is superior to SRAM from the point of view that a the former has a self-recovery function after malfunction due to noise and is effective in realizing safe and reliable digital systems.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 IEEE International Symposium on Electromagnetic Compatability. Symposium Record (Cat. No.99CH36261)

自引率

0.00%

发文量