半导体光放大器中采用交叉增益调制的全光NAND门

2005 Quantum Electronics and Laser Science Conference Pub Date : 2005-09-26 DOI:10.1049/EL:20052320

S. H. Kim, J.H. Kim, J. Choi, Y. Byun, Y. Jhon, S. Lee, D. Woo, S.H. Kim

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引用次数: 113

摘要

利用半导体光放大器的增益非线性特性，设计了一种10gbps的全光NAND门。全光NAND门在单一机制下工作，即XGM。

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All-optical NAND gate using cross gain modulation in semiconductor optical amplifiers

By using gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical NAND gate at 10 Gbps is demonstrated. The all-optical NAND gate operates in single mechanism, which is XGM.

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来源期刊

2005 Quantum Electronics and Laser Science Conference

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