P. Candra, V. Jain, P. Cheng, J. Pekarik, R. Camillo-Castillo, P. Gray, T. Kessler, J. Gambino, J. Dunn, D. Harame
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A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz
A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with fT/fMAX of 260/320 GHz, a high breakdown (HB) HBT with BVCEO of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper.
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