Co/sup 60/ γ辐射对电子倍增电荷耦合器件的影响

Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Pub Date : 1900-01-01 DOI:10.1109/TNS.2004.835099

B. Hadwen, M.A. Camas, M. Robbins

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引用次数: 10

摘要

电子倍增电荷耦合器件(emccd)利用冲击电离来实现高达视频帧率及以上的亚电子噪声。本文介绍了Co/sup 60/辐照对器件暗信号、电荷转移和倍增增益等性能参数的影响。用不同的电离剂量照射设备，并选择偏差来模拟操作条件。测量所有器件的“全局”阈值电压位移约为0.14 V/krad (Si)。然而，辐照对倍增增益没有影响。在室温下，暗信号的辐射诱导乘寄存器分量比图像截面的乘寄存器分量大一个数量级，并且具有较低的温度依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The effects of Co/sup 60/ gamma radiation on electron multiplying charge coupled devices

Electron multiplying charge coupled devices (EMCCDs) utilize impact ionization to achieve subelectron noise up to video frame rates and above. This paper describes the effects of Co/sup 60/ irradiation on device performance parameters including the dark signal, charge transfer and multiplication gain. Devices were irradiated with different ionizing doses, and biases chosen to simulate operating conditions. The 'global' threshold voltage shift was measured to be around 0.14 V/krad (Si) for all devices. However, the multiplication gain was unchanged by the irradiation. The radiation-induced multiplication register component of dark signal was found to be an order of magnitude larger than that from the image section at room temperature, and to have lower temperature dependence.

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来源期刊

Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003.

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