超低直流功率砷化镓HBT s波段低噪声放大器

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470988

K. Kobayashi, A. Oki, L. Tran, D. Streit

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引用次数: 14

摘要

我们报道了一个2.1 mW低直流功率GaAs HBT LNA，在2ghz时噪声系数为2.0 dB，增益为8.9 dB。该放大器实现增益/NF/spl中点/P/sub dc/比值的优点值为2.10 (1/mW)，这是s波段报道的最高值。在2 V和0.46 mA (0.92 mW)的低直流功率偏置下，放大器可获得5.2 dB增益，3.01 dB噪声系数和5.65 (dB/mW)的增益/P/子DC /优值，这也是该频段报道的最高值。HBT LNA消耗的面积为1.05/spl倍/0.82 mm/sup 2/，采用宽松的3 /spl μ /m发射极宽度低成本GaAs生产铸造工艺制造。在不同的低直流偏置下，从hbt获得的高性能使它们对便携式无线消费应用具有吸引力。

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Ultra-low DC power GaAs HBT S-band low noise amplifiers

We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<>

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IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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