Conduction and entropy analysis of a mixed memristor-resistor model for neuromorphic networks

To build neuromorphic hardware with self-assembled memristive networks, it is necessary to determine how the functional connectivity between electrodes can be adjusted, under the application of external signals. In this work, we analyse a model of a disordered memristor-resistor network, within the framework of graph theory. Such a model is well suited for the simulation of physical self-assembled neuromorphic materials where impurities are likely to be present. Two primary mechanisms that modulate the collective dynamics are investigated: the strength of interaction, i.e. the ratio of the two limiting conductance states of the memristive components, and the role of disorder in the form of density of Ohmic conductors (OCs) diluting the network. We consider the case where a fraction of the network edges has memristive properties, while the remaining part shows pure Ohmic behaviour. We consider both the case of poor and good OCs. Both the role of the interaction strength and the presence of OCs are investigated in relation to the trace formation between electrodes at the fixed point of the dynamics. The latter is analysed through an ideal observer approach. Thus, network entropy is used to understand the self-reinforcing and cooperative inhibition of other memristive elements resulting in the formation of a winner-take-all path. Both the low interaction strength and the dilution of the memristive fraction in a network provide a reduction of the steep non-linearity in the network conductance under the application of a steady input voltage. Entropy analysis shows enhanced robustness in selective trace formation to the applied voltage for heterogeneous networks of memristors diluted by poor OCs in the vicinity of the percolation threshold. The input voltage controls the diversity in trace formation.