{"title":"深亚微米CMOS技术中GGNMOS器件的ESD特性","authors":"J. Shi","doi":"10.1109/ICALIP.2016.7846533","DOIUrl":null,"url":null,"abstract":"MOS (Metal-Oxide-Semiconductor) transistor is widely used as ESD (Electro-Static Discharge) protection because of its good snapback characteristics. GGNMOS (Grounded-Gate N-channel MOS) has the advantage of simple construction, easy triggering and low power dissipation, also has the self-ability of ESD protection. The thesis researches in deep sub-micron CMOS (Complementary MOS) technology and MOS device physical dimensions impacting on GGNMOS's ESD characteristics. And the conclusion provide evidence for the device layout design.","PeriodicalId":184170,"journal":{"name":"2016 International Conference on Audio, Language and Image Processing (ICALIP)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"ESD characteristics of GGNMOS device in deep sub-micron CMOS technology\",\"authors\":\"J. Shi\",\"doi\":\"10.1109/ICALIP.2016.7846533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOS (Metal-Oxide-Semiconductor) transistor is widely used as ESD (Electro-Static Discharge) protection because of its good snapback characteristics. GGNMOS (Grounded-Gate N-channel MOS) has the advantage of simple construction, easy triggering and low power dissipation, also has the self-ability of ESD protection. The thesis researches in deep sub-micron CMOS (Complementary MOS) technology and MOS device physical dimensions impacting on GGNMOS's ESD characteristics. And the conclusion provide evidence for the device layout design.\",\"PeriodicalId\":184170,\"journal\":{\"name\":\"2016 International Conference on Audio, Language and Image Processing (ICALIP)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Audio, Language and Image Processing (ICALIP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICALIP.2016.7846533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Audio, Language and Image Processing (ICALIP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICALIP.2016.7846533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
摘要
MOS (metal - oxide semiconductor)晶体管由于其良好的回吸特性被广泛应用于ESD (electrostatic Discharge)保护中。GGNMOS(接地栅n沟道MOS)具有结构简单、触发方便、功耗低的优点，同时还具有ESD保护的自适应能力。本文研究了深亚微米CMOS (Complementary MOS)技术和MOS器件的物理尺寸对GGNMOS ESD特性的影响。所得结论为器件布局设计提供了依据。
ESD characteristics of GGNMOS device in deep sub-micron CMOS technology
MOS (Metal-Oxide-Semiconductor) transistor is widely used as ESD (Electro-Static Discharge) protection because of its good snapback characteristics. GGNMOS (Grounded-Gate N-channel MOS) has the advantage of simple construction, easy triggering and low power dissipation, also has the self-ability of ESD protection. The thesis researches in deep sub-micron CMOS (Complementary MOS) technology and MOS device physical dimensions impacting on GGNMOS's ESD characteristics. And the conclusion provide evidence for the device layout design.
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