相变介质的新思路——实现亚微秒级数据稳定擦除

M. Chen, K. Rubin, R. Barton
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引用次数: 0

摘要

自20世纪70年代初以来,基于非晶相变的可逆光信息存储一直是许多研究的主题。与相变记录介质相关的未解决的问题之一是需要在擦除(结晶)速度和数据(非晶相)稳定性之间进行权衡。在大多数情况下,寻找可行的相变记录材料是基于一种共同的方法。从元素周期表中的VA或VIA元素开始,Te是最受欢迎的元素,试图通过合金化来实现所需的性能。到目前为止,还没有人发表过实现亚微秒擦除速度和实际数据保留期的文章。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New Ideas for Phase-Change Media - Achieving Sub-Microsecond Erase with Data Stability
Reversible optical information storage based on the amorphous-crystalline phase transformation has been the subject of many investigations since the early 1970’s1-8. One of the unresolved problems associated with phase-change recording media has been the need to trade off erase (crystallization) speed against data (amorphous phase) stability. For the most part, the search for viable phase-change recording material has been based on one common approach. Starting with a group VA or VIA element in the periodic table, Te being the most popular one, attempts were made to achieve the desired properties through alloying. To date, no one has published achieving a sub-microsecond erase speed along with a practical data retention period.
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