AgGa2Se3Cl(Br)化合物的晶体结构

I. Ivashchenko, V. Kozák, Lyubomyr Gulay, I. Olekseyuk
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引用次数: 1

摘要

首次用粉末法研究了新型季系化合物的晶体结构。它们在四方晶系中结晶,Sp.Gr。I-4,结构类型CuIn2Te3Cl,细胞参数:AgGa2Se3Cl (a = 5.9789(3) Å, c = 10.8592(7) Å), AgGa2Se3Br (a = 5.9767(3) Å, c = 10.8558(7) Å)。从晶体结构分析发现所研究的四元化合物属于半导体,其通式为AІВІІІ2XVI3YVII (AІ - Cu, Ag;ВІІІ - Ga, In;XVI - S, Se;YVII . Cl, Br, I). АІСІІІ2XVI3YVIІ型的胆碱化合物是指阳离子与阴离子比例为3:4的阳离子缺陷化合物。它们的组成可以用公式Kn-u an来表示,其中K个阳离子,l个空位,A个阴离子,u这个单词的第一个字母是空的。对于这些化合物VEC = 4571。如果我们把空位看成是零价原子,我们得到化合物АІСІІІ2 XVI3YVIІ VEC = 4。当阳离子被最近的四个阴离子包围时,这种结构就是四面体。化合物AgGa2Se3Cl(Br)的晶体结构证实了这一点。这些化合物和其他化合物的半导体性质可以从AІВІІІ2XVI3YVII (AІ - Cu, Ag;ВІІІ - Ga, In;XVI - S, Se;* Cl, Br, I)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CRYSTAL STRUCTURE OF AgGa2Se3Cl(Br) COMPOUNDS
For the first time, the crystal structures of new quaternary compounds were studied by the powder method. They crystallize in tetragonal system, Sp.Gr. I-4, structural type CuIn2Te3Cl, with cell parameters: AgGa2Se3Cl (a = 5.9789(3) Å, c = 10.8592(7) Å), AgGa2Se3Br (a = 5.9767(3) Å, c = 10.8558(7) Å). From the analysis of the crystal structure it was found that the researched quaternary compounds belong to semiconductors with the general formula AІВІІІ2XVI3YVII (AІ – Cu, Ag; ВІІІ – Ga, In; XVI – S, Se; YVII  Cl, Br, I). Chalcohalide compounds of the АІСІІІ2XVI3YVIІ type refers to cation-defective compounds with a ratio of cations to anions 3:4. Their compositions can be represented by the formula Kn-uuAn, where K cations,  vacancies, A anions, u the first letter of the word unoccupied. For these compounds VEC = 4,571. If we consider the vacancy as an atom with zero valence, we get for compounds АІСІІІ2XVI3YVIІ VEC = 4. This structure refers to the tetrahedrals when the cations are surrounded by the four nearest anions. This is confirmed by the studied crystal structures of the compounds AgGa2Se3Cl(Br). The semiconductor properties can be expected from these and other compounds from the group AІВІІІ2XVI3YVII (AІ – Cu, Ag; ВІІІ – Ga, In; XVI – S, Se; YVII  Cl, Br, I).
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