F. Hieronymi, E. H. Bottcher, E. Droge, D. Kuhl, D. Bimberg
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引用次数: 2
摘要
作者报道了用于大面积应用的高性能InGaAs金属-半导体-金属(MSM)光电探测器。采用Fe掺杂获得了高电阻率InGaAs:Fe光活性层和InP:Fe肖特基势垒增强层。所制备的交叉数字MSM探测器的有效面积为350 /spl μ m /spl倍/ 350 /spl μ m /m。在典型的工作偏置为10 V时，实现了1.6 pF的电容和近1 GHz的电带宽。由于低容性负载，该器件消耗高灵敏度和大带宽操作，因此对于大面积光电接收器非常有吸引力。
The authors report on high-performance InGaAs metal-semiconductor-metal (MSM) photodetectors for large area applications. Fe-doping was employed to obtain the high-resistivity InGaAs:Fe photoactive layer and the InP:Fe Schottky-barrier enhancement layer. The fabricated interdigitated MSM detectors have an active area of 350 /spl mu/m /spl times/ 350 /spl mu/m. At typical operating bias of 10 V, a capacitance of 1.6 pF and almost 1 GHz electrical bandwidth was achieved. The devices are very attractive for large area photoreceivers since they consume high-sensitivity and large-bandwidth operation due to low capacitive loading.<>
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