S. Clochiatti, E. Mutlu, C. Preuss, R. Kress, W. Prost, N. Weimann
{"title":"带集成天线的InP三势垒谐振隧道二极管宽带太赫兹探测","authors":"S. Clochiatti, E. Mutlu, C. Preuss, R. Kress, W. Prost, N. Weimann","doi":"10.1109/IWMTS51331.2021.9486794","DOIUrl":null,"url":null,"abstract":"A broadband THz detector consisting of a triple-barrier InP Resonant Tunneling Diode (RTD) with a monolithically integrated circularly polarized spiral antenna is designed, fabricated, and measured at room temperature. A free space measurement setup is utilized for far-field characterization. The detector (evaluated at zero-bias) is illuminated by a chopped continuous wave signal in the 220–330 GHz band, and the direct detection scheme consists of a lock-in amplifier in voltage mode readout. The measured average responsivity RV is in the range of 750 V/W with a peak of 900 V/W at 257.5 GHz, with the lowest calculated NEP of 2.5 pW/√Hz.","PeriodicalId":429985,"journal":{"name":"2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Broadband THz Detection Using InP Triple-Barrier Resonant Tunneling Diode With Integrated Antenna\",\"authors\":\"S. Clochiatti, E. Mutlu, C. Preuss, R. Kress, W. Prost, N. Weimann\",\"doi\":\"10.1109/IWMTS51331.2021.9486794\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband THz detector consisting of a triple-barrier InP Resonant Tunneling Diode (RTD) with a monolithically integrated circularly polarized spiral antenna is designed, fabricated, and measured at room temperature. A free space measurement setup is utilized for far-field characterization. The detector (evaluated at zero-bias) is illuminated by a chopped continuous wave signal in the 220–330 GHz band, and the direct detection scheme consists of a lock-in amplifier in voltage mode readout. The measured average responsivity RV is in the range of 750 V/W with a peak of 900 V/W at 257.5 GHz, with the lowest calculated NEP of 2.5 pW/√Hz.\",\"PeriodicalId\":429985,\"journal\":{\"name\":\"2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS)\",\"volume\":\"146 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWMTS51331.2021.9486794\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWMTS51331.2021.9486794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband THz Detection Using InP Triple-Barrier Resonant Tunneling Diode With Integrated Antenna
A broadband THz detector consisting of a triple-barrier InP Resonant Tunneling Diode (RTD) with a monolithically integrated circularly polarized spiral antenna is designed, fabricated, and measured at room temperature. A free space measurement setup is utilized for far-field characterization. The detector (evaluated at zero-bias) is illuminated by a chopped continuous wave signal in the 220–330 GHz band, and the direct detection scheme consists of a lock-in amplifier in voltage mode readout. The measured average responsivity RV is in the range of 750 V/W with a peak of 900 V/W at 257.5 GHz, with the lowest calculated NEP of 2.5 pW/√Hz.
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