Ion Implantation Characterisation: A Comparison of Photothermal Radiometric and Photodisplacement Thermal Wave Techniques

In this work we evaluate the applicability of two nondestructive thermal wave techniques for ion implant monitoring, these being photodisplacement and photothermal radiometric microscopy. Experimental results are presented for BFz implants into single-crystal (100) silicon wafers with implantation parameters varied as follows: Ion dose (lE12-3E15 ions/cm* ) and ion energy (50-200 keV). Using these results, the sensitivity of the above techniques to material parameters such as lattice damage, ion penetration depth and surface recombination velocity is discussed. We will show that while no one technique is applicable to all implant characteristics, the various techniques examined are complementary and thus application specific.