Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×104 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm2 V-1 s-1 to 1.1cm2 V-1 s-1. The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×105.