在快闪记忆体装置上模拟演算法的效能

K. A. Ross
{"title":"在快闪记忆体装置上模拟演算法的效能","authors":"K. A. Ross","doi":"10.1145/1457150.1457153","DOIUrl":null,"url":null,"abstract":"NAND flash memory is fast becoming popular as a component of large scale storage devices. For workloads requiring many random I/Os, flash devices can provide two orders of magnitude increased performance relative to magnetic disks. Flash memory has some unusual characteristics. In particular, general updates require a page write, while updates of 1 bits to 0 bits can be done in-place. In order to measure how well algorithms perform on such a device, we propose the \"EWOM\" model for analyzing algorithms on flash memory devices. We introduce flash-aware algorithms for counting, listmanagement, and B-trees, and analyze them using the EWOM model. This analysis shows that one can use the incremental 1-to-0 update properties of flash memory in interesting ways to reduce the required number of page-write operations.","PeriodicalId":298901,"journal":{"name":"International Workshop on Data Management on New Hardware","volume":"252 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Modeling the performance of algorithms on flash memory devices\",\"authors\":\"K. A. Ross\",\"doi\":\"10.1145/1457150.1457153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NAND flash memory is fast becoming popular as a component of large scale storage devices. For workloads requiring many random I/Os, flash devices can provide two orders of magnitude increased performance relative to magnetic disks. Flash memory has some unusual characteristics. In particular, general updates require a page write, while updates of 1 bits to 0 bits can be done in-place. In order to measure how well algorithms perform on such a device, we propose the \\\"EWOM\\\" model for analyzing algorithms on flash memory devices. We introduce flash-aware algorithms for counting, listmanagement, and B-trees, and analyze them using the EWOM model. This analysis shows that one can use the incremental 1-to-0 update properties of flash memory in interesting ways to reduce the required number of page-write operations.\",\"PeriodicalId\":298901,\"journal\":{\"name\":\"International Workshop on Data Management on New Hardware\",\"volume\":\"252 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshop on Data Management on New Hardware\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1457150.1457153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Data Management on New Hardware","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1457150.1457153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25

摘要

NAND闪存作为大规模存储设备的一个组成部分,正迅速流行起来。对于需要许多随机I/ o的工作负载,闪存设备可以提供相对于磁盘两个数量级的性能提升。闪存有一些不寻常的特性。特别是,一般更新需要写页,而从1位到0位的更新可以就地完成。为了衡量算法在这种设备上的表现如何,我们提出了“edom”模型来分析闪存设备上的算法。我们介绍了用于计数、列表管理和b树的flash感知算法,并使用edom模型对它们进行了分析。该分析表明,可以以有趣的方式使用闪存的增量1到0更新属性来减少所需的页写操作数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling the performance of algorithms on flash memory devices
NAND flash memory is fast becoming popular as a component of large scale storage devices. For workloads requiring many random I/Os, flash devices can provide two orders of magnitude increased performance relative to magnetic disks. Flash memory has some unusual characteristics. In particular, general updates require a page write, while updates of 1 bits to 0 bits can be done in-place. In order to measure how well algorithms perform on such a device, we propose the "EWOM" model for analyzing algorithms on flash memory devices. We introduce flash-aware algorithms for counting, listmanagement, and B-trees, and analyze them using the EWOM model. This analysis shows that one can use the incremental 1-to-0 update properties of flash memory in interesting ways to reduce the required number of page-write operations.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信