深耗尽沟道MOSFET阈值电压建模及其模拟性能仿真研究

International Conference on Electronics, Communication and Instrumentation (ICECI) Pub Date : 2014-03-17 DOI:10.1109/ICECI.2014.6767383

S. Sengupta, Soumya Pandit

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引用次数: 0

摘要

本文提出了深耗尽沟道MOS晶体管长沟道和短沟道阈值电压的解析模型。并将模型预测结果与TCAD仿真结果进行了比较。本文还报道了DDC MOS晶体管与均匀掺杂晶体管模拟性能的比较研究。TCAD工具使用已公布的DDC MOS晶体管数据进行校准。仿真结果表明，DDC MOS晶体管的抗扰度优于传统的大块MOS晶体管。

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Threshold voltage modeling of Deeply Depleted Channel MOSFET and simulation study of its analog performances

This paper presents the analytical models for the long channel and short channel threshold voltage of Deeply Depleted Channel (DDC) MOS transistor. The model predicted results are compared with TCAD simulation results. This paper also reports the comparative study of the analog performances of the DDC MOS transistor with those of a uniformly doped transistor. The TCAD tool is calibrated with published data of DDC MOS transistor. The better immunity of the DDC MOS transistor in comparison to the conventional bulk MOS transistor is demonstrated through simulation results.

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International Conference on Electronics, Communication and Instrumentation (ICECI)

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