用扫描电容显微镜和透射电子显微镜作为互补技术的掺杂计量分析

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638126

M. Natarajan, T. Sheng, K. Pey, Y. Lee, M. Radhakrishnan

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引用次数: 1

摘要

本文介绍了利用扫描电容显微镜(SCM)和透射电子显微镜(TEM)对动态随机存取存储器(DRAM)器件进行物理分析的结果，以研究沟槽电容器结构侧壁处的掺杂物分布。SCM结果提供了样品上掺杂计量的信息，而TEM分析，包括结描绘，进一步支持了掺杂分布以及其他物理现象的发现。

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Analysis of dopant metrology using scanning capacitance microscopy and transmission electron microscopy as complementary techniques

The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena.

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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