基于NiFe/Ag多层材料的巨磁阻传感器研究进展综述

M. Parker, K. Coffey, J. K. Howard, R. Fontana, C. Tsang, T. L. Hylton
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引用次数: 22

摘要

从早期的连续多层(CML)结构,到NiFe和Ag的颗粒合金(GAs)、自旋阀(SVs)、不连续多层(dml)和最近的图案多层(PML)结构,回顾和追踪了基于NiFe和Ag的薄膜巨磁电阻(GMR)结构的器件的演变。讨论了发展这些不同结构的技术动机,特别是基于场灵敏度作为一个重要的优点,以及它们的局限性。虽然dml具有最高的灵敏度(1.2%/Oe),但它们受到噪声的限制。影响NiFe/Ag DML传感器实现的各种问题特别强调噪声,因为目前噪声阻碍了成功传感器的开发。研究了DML传感器的MR特性作为不同偏置方案的函数,以降低噪声和提高线性度。结果表明,当横向偏置时,十层DML传感器的横向响应具有可接受的噪声性能。这代表了降低NiFe/Ag MLs噪声的两种基本方法之一,即一种基于增加结构中易于切换的铁磁“晶粒”数量的概念。另一种方法是基于在每个NiFe层中由单个大域组成的传感器的概念,这为图案多层(PML)器件的发展提供了动力。最后,简要讨论了这些PML结构的GMR响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Overview Of Progress In Giant Magnetoresistive Sensors Based On NiFe/Ag Multilayers
The evolution of devices based on NiFe and Ag in thin film giant magnetoresistance (GMR) structures is reviewed and traced from the early continuous multilayer (CML) structures, through granular alloys (GAs) of NiFe and Ag, spin valves (SVs), discontinuous multilayers (DMLs), and the most recent patterned multilayer (PML) structures. The technological motivation far the development of these various structures, based in particular on field sensitivity as an important figure of merit, and their limitations is discussed. Although DMLs are shown to possess the highest sensitivity, 1.2%/Oe, it is shown that they are limited by noise. Various issues affecting the implementation of NiFe/Ag DML sensors are addressed with particular emphasis on noise, since presently noise gates the development of a successful sensor. The MR characteristics of DML sensors are examined as a function of different biasing schemes to reduce noise and improve linearity. It is shown that the transverse response of ten-layer DML sensors when transversely biased may give acceptable noise performance. This represents one of the two fundamental approaches to the reduction of noise in NiFe/Ag MLs, i.e. one based on the concept of increasing the number of easily switchable ferromagnetic "grains" in the structure. The other approach is based on the concept of a sensor consisting of single large domains in each NiFe layer which provided the impetus for the development of patterned multilayer (PML) devices. Finally, the GMR response of these PML structures is briefly discussed.
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