微制造薄硅蒸汽室低轮廓热管理

Jiaxing Liang, M. Bakir, Y. Joshi
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引用次数: 8

摘要

本文介绍了适合集成到封装中的超薄硅蒸汽室的热性能表征,包括可能的中间层。采用光刻技术和深度反应离子蚀刻技术(DRIE)制造了三种不同孔隙度的720±10 pm厚的硅气腔,然后通过喷墨打印和自组装在气腔内制造出图案双孔单层铜粉气腔结构,最后使用低排气环氧树脂粘合气腔。蒸汽室用环氧铜管连接,在充入去离子水之前,将其抽真空至1.2 Pa。电阻加热器为蒸发器提供热量,引脚鳍散热器将热量从蒸汽室的外围延伸处排出到环境中。研究了气芯孔隙率和气芯饱和度对蒸汽室性能和可靠性的影响。实验结果表明,在孔隙率为0.767,芯芯饱和比约为50%的条件下,风冷热阻为2.5 K/W,热流密度为7.6 W/cm2。带电样品的最低热阻为未带电样品的38%,为750±25 pm固体硅衬底热阻的74%。120小时的测试表明,蒸汽室的性能没有明显下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microfabricated thin silicon vapor chamber for low profile thermal management
This paper presents thermal performance characterization of ultra-thin silicon vapor chambers suitable for integration into packages, including possibly interposers. 720±10 pm thick silicon vapor chambers at three different wick porosities have been fabricated using photolithography and deep reactive ion etching (DRIE) to create chambers, followed by inkjet printing and self-assembly to create patterned bi-porous monolayer copper powder wick structures within the chambers, and finally completed by the use of a low outgassing epoxy to bond the vapor chambers. Vapor chambers were attached with copper tubing using epoxy and were evacuated to 1.2 Pa, prior to charging with de-ionized water. A resistance heater provided heat to the evaporator, and a pin fin heat sink rejected heat to the ambient from the peripheral extension of the vapor chamber. The effect of wick porosity and wick saturation ratio on the performance and reliability of the vapor chambers were studied. Experimental results showed that at a porosity of 0.767, with wick saturation ratio of approximately 50%, the thermal resistance with air cooling was 2.5 K/W, at a heat flux of 7.6 W/cm2. The lowest thermal resistance of a charged sample was 38% of an uncharged sample's, and was 74% of a 750±25 pm solid silicon substrate's thermal resistance. Testing for 120 hrs showed no significant degradation of the performance of the vapor chambers.
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