T. Nakayama, T. Takizawa, Y. Sakamoto, K. Kashiwagi
{"title":"表面波激发氢等离子体辐照氧化锌薄膜的表面改性效果","authors":"T. Nakayama, T. Takizawa, Y. Sakamoto, K. Kashiwagi","doi":"10.1109/DEIV.2006.357365","DOIUrl":null,"url":null,"abstract":"[Outline] We investigate about the increase of conductivity of zinc oxide thin films by irradiating a surface wave excited hydrogen plasma. [Experiment] Zinc oxide thin films are irradiated by surface wave hydrogen plasma generated by means of microwave. The changes of the conductivity of the thin films are evaluated by using a resistivity meter. The zinc oxide thin films used here have the thickness of 1500Aring which is formed by the reactant ion plating method. Diagnosis of a film is thicknessmeter. The surface of thin films and the chemical bond state of the depth direction are measured by XRD and XPS, SIMS. The XRD and XPS, SIMS are utilized to observe the crystal and chemical structures. Transmissivity is measured by spectrophotometer. [Result] The surface resistance changes from infinite to 3.0 times 10 2[/sq], without losing transparency by irradiating hydrogen microwave surface wave plasma at a zinc oxide thin film","PeriodicalId":369861,"journal":{"name":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The surface modification effect by irradiation of a surface wave excited hydrogen plasma onto zinc oxide thin films\",\"authors\":\"T. Nakayama, T. Takizawa, Y. Sakamoto, K. Kashiwagi\",\"doi\":\"10.1109/DEIV.2006.357365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"[Outline] We investigate about the increase of conductivity of zinc oxide thin films by irradiating a surface wave excited hydrogen plasma. [Experiment] Zinc oxide thin films are irradiated by surface wave hydrogen plasma generated by means of microwave. The changes of the conductivity of the thin films are evaluated by using a resistivity meter. The zinc oxide thin films used here have the thickness of 1500Aring which is formed by the reactant ion plating method. Diagnosis of a film is thicknessmeter. The surface of thin films and the chemical bond state of the depth direction are measured by XRD and XPS, SIMS. The XRD and XPS, SIMS are utilized to observe the crystal and chemical structures. Transmissivity is measured by spectrophotometer. [Result] The surface resistance changes from infinite to 3.0 times 10 2[/sq], without losing transparency by irradiating hydrogen microwave surface wave plasma at a zinc oxide thin film\",\"PeriodicalId\":369861,\"journal\":{\"name\":\"2006 International Symposium on Discharges and Electrical Insulation in Vacuum\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Symposium on Discharges and Electrical Insulation in Vacuum\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DEIV.2006.357365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEIV.2006.357365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The surface modification effect by irradiation of a surface wave excited hydrogen plasma onto zinc oxide thin films
[Outline] We investigate about the increase of conductivity of zinc oxide thin films by irradiating a surface wave excited hydrogen plasma. [Experiment] Zinc oxide thin films are irradiated by surface wave hydrogen plasma generated by means of microwave. The changes of the conductivity of the thin films are evaluated by using a resistivity meter. The zinc oxide thin films used here have the thickness of 1500Aring which is formed by the reactant ion plating method. Diagnosis of a film is thicknessmeter. The surface of thin films and the chemical bond state of the depth direction are measured by XRD and XPS, SIMS. The XRD and XPS, SIMS are utilized to observe the crystal and chemical structures. Transmissivity is measured by spectrophotometer. [Result] The surface resistance changes from infinite to 3.0 times 10 2[/sq], without losing transparency by irradiating hydrogen microwave surface wave plasma at a zinc oxide thin film