SiO2改性聚酰亚胺薄膜的高频显影及放电特性

Z. Xing, Pengfei Wu, Helin Xu, Zi’an Ding, Jianhong Hao, Qingmin Li, Zhiyun Han, Yujin Guo, Ziwei Dong
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引用次数: 0

摘要

聚酰亚胺可用于高频电力变压器的绝缘涂覆。表面放电将导致绝缘失效。将含有2%、4%、6%、8%和10% Si元素的纳米sio2颗粒引入聚酰亚胺中进行纳米复合改性(Si0、Si2、Si4、Si6、Si8、Si10)。结果表明,Si0的寿命最短,Si10的寿命最长。研究了Si0和Si10高频表面放电的发展过程和特性。结果表明:在引脚板电极高频表面放电过程中,闪络造成的损伤较大;正半循环和极性反转放电更为严重。与Si0相比,Si10的正半循环的放电幅度和放电次数和总体都较小。初期Si10的放电幅度较大,但放电次数较少。两种膜的放电幅度在中期有波动,Si10的放电频率在后期较多。Si0的放电幅度和频率远高于Si10,导致Si0快速击穿。进一步研究表明,Si10的电阻率小于Si0,因此Si10在初期放电较为严重。材料结构特性在中后期起着重要的作用。改性引起的界面效应和光能吸收起重要作用,因此Si0的放电较为严重。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High frequency development and discharge characteristics of SiO2 modified polyimide films
Polyimide can be used to coat insulation of high frequency power transformer. Surface discharge will lead to insulation failure. In this paper, nano-SiO2 particles containing 2%, 4%, 6%, 8% and 10% Si element were introduced into polyimide for nano composite modification (Si0, Si2, Si4, Si6, Si8, Si10). It is found that the lifetime of Si0 is the shortest and that of Si10 is the longest. The development process and characteristics of high-frequency surface discharge of Si0 and Si10 are studied. The results show that: in the process of high-frequency surface discharge of pin plate electrode, the damage caused by flashover is greater. The discharge at positive half cycle and polarity reversal is more severe. Compared with Si0, the amplitude and number of discharge of positive half cycle and overall of Si10 are smaller. At first, the discharge amplitude of Si10 is larger but the number of discharge is less. The discharge amplitude of two kinds of films fluctuates in the middle stage, and the discharge frequency of Si10 is more in the later stage. The discharge amplitude and frequency of Si0 are much higher than that of Si10, which leads to the rapid breakdown of Si0. Further research shows that resistivity of Si10 is less than that of Si0, so discharge of Si10 is more serious in the early stage. The material structure characteristics plays an important role in in the middle and late stage. The interface effect and light energy absorption caused by modification play an important role, so the discharge of Si0 is more serious.
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