一种基于二氧化钒金属绝缘体过渡的超低损耗毫米波固态开关技术

C. Hillman, P. Stupar, J. Hacker, Z. Griffith, M. Field, M. Rodwell
{"title":"一种基于二氧化钒金属绝缘体过渡的超低损耗毫米波固态开关技术","authors":"C. Hillman, P. Stupar, J. Hacker, Z. Griffith, M. Field, M. Rodwell","doi":"10.1109/MWSYM.2014.6848479","DOIUrl":null,"url":null,"abstract":"A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF/ZON, is greater than 500:1 at 50GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"An ultra-low loss millimeter-wave solid state switch technology based on the metal - insulator - transition of vanadium dioxide\",\"authors\":\"C. Hillman, P. Stupar, J. Hacker, Z. Griffith, M. Field, M. Rodwell\",\"doi\":\"10.1109/MWSYM.2014.6848479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF/ZON, is greater than 500:1 at 50GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.\",\"PeriodicalId\":262816,\"journal\":{\"name\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2014.6848479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

摘要

提出了一种基于二氧化钒金属/绝缘体可逆相变的超低损耗宽带毫米波开关新技术。我们报告制造了一系列配置,单极单掷(SPST)开关,测量了从DC到110 GHz的s参数。在50 GHz时,导通状态插入损耗为0.2 dB,关断状态隔离为21 dB。得到的阻抗对比度ZOFF/ZON在50GHz(即截止频率fc ~ 40thz)时大于500:1。为了演示该技术的实用性,我们还展示了包含一对VO2 SP4T开关的2位实时延迟移相器的结果。这种开关技术的高阻抗对比度,加上其紧凑性,易于集成和低电压操作,使其成为以前无法实现的高性能毫米波fpga的推手。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ultra-low loss millimeter-wave solid state switch technology based on the metal - insulator - transition of vanadium dioxide
A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF/ZON, is greater than 500:1 at 50GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.
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